The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Dec. 16, 2014
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Sumitomo Seika Chemicals Co., Ltd., Hyogo, JP;
Satoshi Inoue, Ishikawa, JP;
Tatsuya Shimoda, Ishikawa, JP;
Nobutaka Fujimoto, Osaka, JP;
Kiyoshi Nishioka, Hyogo, JP;
Shuichi Karashima, Osaka, JP;
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Sumitomo Seika Chemicals Co., Ltd., Hyogo, JP;
Abstract
It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layerthat covers a gate electrode layerdisposed above a semiconductor layerwith a gate insulatorbeing interposed between the gate electrode layerand the semiconductor layer, and also covers the semiconductor layer, and has a dopant causing the semiconductor layerto become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layerand decomposition of the aliphatic polycarbonate layer