The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Mar. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chi-Yuan Wen, Tainan, TW;

Chien Nan Tu, Kaohsiung, TW;

Ming-Chi Wu, Kaohsiung, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/146 (2013.01); H01L 27/1463 (2013.01);
Abstract

The present disclosure relates to an image sensor integrated chip having a grid structure that reduces crosstalk between pixel regions of an image sensor chip. In some embodiments, the integrated chip has an image sensing element arranged within a substrate. An absorption enhancement structure is disposed along the back-side of the substrate. A grid structure is arranged over the absorption enhancement structure. The grid structure defines an opening arranged over the image sensing element and extends from over the absorption enhancement structure to a location within the absorption enhancement structure. By having the grid structure extend into the absorption enhancement structure, the grid structure is able to reduce crosstalk between adjacent image sensing elements by blocking radiation reflected off of non-planar surfaces of the absorption enhancement structure from traveling to an adjacent pixel region.


Find Patent Forward Citations

Loading…