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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9985032 B1

PDFFull Text
Date of Patent:
May. 29, 2018

Filed:

Jun. 09, 2016

Selectively degrading current resistance of field effect transistor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Veeraraghavan S. Basker, Schenectady, NY (US);

Effendi Leobandung, Stormville, NY (US);

Dieter Wendel, Boeblingen, DE;

Tenko Yamashita, Schenectady, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Armando Rodriguez

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/11 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 27/1108 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01);
Abstract

A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.

Find Patent Forward Citations

Basker, Veeraraghavan. (2018). Selectively degrading current resistance of field effect transistor devices (U.S. Patent No. 9985032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9985032

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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