The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Aug. 15, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Ming-Shan Shieh, Hsinchu, TW;
Cheng-Long Chen, Hsin-Chu, TW;
Wai-Yi Lien, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A transistor, an integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the transistor includes a source electrode, at least one semiconductor channel, a gate electrode, a drain electrode, and a drain pad. The source electrode is disposed in a substrate. The semiconductor channel extends substantially perpendicular to the source electrode. The gate electrode surrounds the semiconductor channel. The drain electrode is disposed on top of the semiconductor channel. The drain pad is disposed on the drain electrode, wherein the drain pad comprises multiple conductive layers.