The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Nov. 05, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Ching-Wen Hung, Tainan, TW;
Yi-Kuan Wu, Kaohsiung, TW;
Jia-Rong Wu, Kaohsiung, TW;
Yi-Hui Lee, Taipei, TW;
Ying-Cheng Liu, Tainan, TW;
Chih-Sen Huang, Tainan, TW;
Yi-Wei Chen, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure.