The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jun. 14, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yong-Ho Jeon, Hwaseong-si, KR;
Sang-Su Kim, Yongin-si, KR;
Cheol Kim, Hwaseong-si, KR;
Yong-Suk Tak, Seoul, KR;
Myung-Geun Song, Yongin-si, KR;
Gi-Gwan Park, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device, including a first fin-type pattern; a first gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and including an upper portion and a lower portion; a second gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and being spaced apart from the first gate spacer; a first trench defined by the first gate spacer and the second gate spacer; a first gate electrode partially filling the first trench; a first capping pattern on the first gate electrode and filling the first trench; and an interlayer insulating layer covering an upper surface of the capping pattern, a width of the upper portion of the first gate spacer decreasing as a distance from an upper surface of the first fin-type pattern increases, and an outer sidewall of the upper portion of the first gate spacer contacting the interlayer insulating layer.