The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Aug. 03, 2011
Applicants:
Sarit Dhar, Raleigh, NC (US);
Sei-hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Robert Williams, Opelika, AL (US);
Inventors:
Sarit Dhar, Raleigh, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Robert Williams, Opelika, AL (US);
Assignees:
Cree, Inc., Durham, NC (US);
Auburn University, Auburn, AL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3115 (2006.01); H01L 21/04 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3115 (2013.01); H01L 21/049 (2013.01); H01L 29/408 (2013.01); H01L 29/51 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/0878 (2013.01); H01L 29/1608 (2013.01);
Abstract
Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.