The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Sep. 11, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yen-Hao Chen, Hsin-Chu, TW;
Chien-Wei Wang, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/004 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/2004 (2013.01); G03F 7/2059 (2013.01); G03F 7/30 (2013.01);
Abstract
The present disclosure is directed to a photoresist and a method of performing a lithography process using the photoresist. The photoresist contains a polymer and a photo-acid generator. The photo-acid generator contains a sensitizer component, an acid generator component, and a bonding component that bonds the sensitizer component to the acid generator component. The bonding component may be either a single bond or a conjugated bond. The lithography process may be an EUV lithography process or an e-beam lithography process.