The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
May. 13, 2016
Applicant:
Power Integrations, Inc., San Jose, CA (US);
Inventor:
Robert Mayell, Los Altos, CA (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R 1/20 (2006.01); G01R 19/00 (2006.01); H01L 27/06 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01); H01L 27/0623 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01);
Abstract
An integrated circuit (IC) for sensing a current flowing through a transistor device includes a substrate and a current scaling circuit that includes first and second MOSFET devices. The first MOSFET device has a drain coupled to the switched FET at a first node and a source coupled to the substrate. The second MOSFET device has a source coupled to the substrate and a drain coupled to a second node. The first MOSFET device has a channel size that is K times larger than the second MOSFET device. Circuitry is included that equalizes a voltage across both the first MOSFET device and the second MOSFET device.