The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Feb. 20, 2015
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Akira Sakurai, Osaka, JP;

Satoshi Kumagai, Osaka, JP;

Takashi Sonohata, Iwaki, JP;

Michiaki Ohto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 9/00 (2006.01); C22F 1/08 (2006.01); C22F 1/00 (2006.01); C21D 8/10 (2006.01); H01J 37/34 (2006.01); B22D 11/00 (2006.01); C22C 9/01 (2006.01); C22C 9/02 (2006.01); C22C 9/04 (2006.01); C22C 9/05 (2006.01); C22C 9/06 (2006.01); C23C 14/34 (2006.01); C21D 9/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C21D 8/10 (2013.01); C21D 9/0068 (2013.01); C22C 9/00 (2013.01); C22C 9/05 (2013.01); C22F 1/00 (2013.01); C22F 1/08 (2013.01); C23C 14/3407 (2013.01); H01J 37/3423 (2013.01); H01J 37/3426 (2013.01); H01J 37/3491 (2013.01); B22D 11/004 (2013.01); C22C 9/01 (2013.01); C22C 9/02 (2013.01); C22C 9/04 (2013.01); C22C 9/06 (2013.01);
Abstract

A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.


Find Patent Forward Citations

Loading…