The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Oct. 20, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1641 (2013.01); H01L 21/02568 (2013.01); H01L 21/02664 (2013.01);
Abstract
The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.