The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 13, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming Zhu, Singapore, SG;
Hui-Wen Lin, Taiping, TW;
Harry Hak-Lay Chuang, Singapore, SG;
Bao-Ru Young, Zhubei, TW;
Yuan-Sheng Huang, Taichung, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Kuo-Cheng Ching, Zhubei, TW;
Ting-Hua Hsieh, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.