The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Oct. 20, 2016
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Yiying Zhang, Shanghai, CN;
Erhu Zheng, Shanghai, CN;
Abstract
A method for manufacturing a semiconductor device may include the following steps: providing a spacer structure on a first side of a stack structure, wherein the stack structure includes a mask and a conductor; providing an etch stop layer, wherein a portion of the etch stop layer directly contacts both the mask and a portion of the spacer structure; providing a dielectric material member on the etch stop layer; partially removing the first dielectric material member to expose the portion of the etch stop layer; removing the portion of the etch stop layer to expose the portion of the spacer structure; removing the portion of the spacer structure to expose a side of the mask and to form a first spacer; and providing a second spacer, which directly contacts both the first spacer and the side of the mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile