The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Jun. 02, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Weichang Liu, Singapore, SG;

Zhen Chen, Singapore, SG;

Shen-De Wang, Hsinchu County, TW;

Wang Xiang, Singapore, SG;

Wei Ta, Singapore, SG;

Chuan Sun, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/423 (2006.01); H01L 27/11517 (2017.01); H01L 21/283 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11517 (2013.01); H01L 21/0214 (2013.01); H01L 21/283 (2013.01); H01L 29/42328 (2013.01);
Abstract

A flash memory includes a substrate, a memory gate on the substrate, a charge-storage layer between the memory gate and the substrate, a select gate adjacent to the memory gate, a select gate dielectric layer between the select gate and the substrate, a first oxide-nitride spacer between the memory gate and the select gate, and a second oxide-nitride spacer. The select gate includes an upper portion and a lower portion. The second oxide-nitride spacer is disposed between the first oxide-nitride spacer and the upper portion of the select gate.


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