The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

May. 25, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Fu Chang, Pingtung County, TW;

Jen-Pan Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01);
Abstract

A passive device and method of fabricating the passive device are disclosed herein. The capacitor structure incorporates a resistor and a capacitor. An exemplary method includes receiving a substrate that has undergone front end of line (FEOL) processing, and performing back end of line (BEOL) processing on the substrate, wherein a capacitor structure is formed over the substrate during the BEOL processing, the capacitor structure incorporating a resistor with a capacitor. The BEOL processing can include performing a first metallization process to form a bottom plate of the capacitor structure; forming a dielectric spacer of the capacitor structure over the bottom plate; forming a top plate of the capacitor structure over the dielectric spacer; and performing a second metallization process to form contacts coupled to the top plate and the bottom plate of the capacitor structure.


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