The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
May. 01, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Yanxiang Liu, Glenville, NY (US);
Haining Yang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract
The n-type to p-type fin-FET strength ratio in an integrated logic circuit may be tuned by the use of cut regions in the active and dummy gate electrodes. In some examples, separate cut regions for the dummy gate electrodes and the active gate electrode may be used to allow for different lengths of gate pass-active regions resulting in appropriately tuned integrated logic circuits.