The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Dec. 18, 2013
MD M. Hoque, Gilbert, AZ (US);
Patrice Parris, Phoenix, AZ (US);
Weize Chen, Phoenix, AZ (US);
Richard DE Souza, Chandler, AZ (US);
Md M. Hoque, Gilbert, AZ (US);
Patrice Parris, Phoenix, AZ (US);
Weize Chen, Phoenix, AZ (US);
Richard De Souza, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
An embodiment of an Ion Sensitive Field Effect Transistor (ISFET) structure includes a substrate, source and drain regions formed within the substrate and spatially separated by a channel region, a gate dielectric and a gate formed over the channel region, multiple conductive structures overlying the surface of the substrate, and one or more protection diode circuits coupled between one or more of the multiple conductive structures and the substrate. The multiple conductive structures include a floating gate structure and a sense plate structure. The floating gate structure is formed over the gate dielectric and includes the gate. The sense plate structure is electrically coupled to the floating gate structure and is configured to sense a concentration of a target ion or molecule in a fluid adjacent to a portion of the sense plate structure.