The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Feb. 26, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Hsu Yen, Hsinchu, TW;
Bang-Yu Huang, Zhubei, TW;
Chui-Ya Peng, Hsinchu, TW;
Ching-Wen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating a shallow trench isolation includes forming a trench in a substrate, forming a bottom shallow trench isolation dielectric filling a gap of the trench, and forming a top shallow trench isolation dielectric on the bottom shallow trench isolation. The bottom shallow trench isolation dielectric has a concave center portion, and the top shallow trench isolation dielectric is deposited on the bottom shallow trench isolation by a high density plasma chemical vapor deposition process using low deposition to sputter ratio. A semiconductor structure having the shallow trench isolation is also disclosed.