The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Mar. 25, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Hiroshi Tanaka, Naka, JP;

Toshiaki Fujita, Naka, JP;

Noriaki Nagatomo, Naka, JP;

Kazutaka Fujiwara, Naka, JP;

Hitoshi Inaba, Naka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); H01C 7/00 (2006.01); H01C 7/04 (2006.01); H01C 17/065 (2006.01); H01C 17/12 (2006.01); G01K 7/22 (2006.01); C23C 14/06 (2006.01);
U.S. Cl.
CPC ...
H01C 7/008 (2013.01); C23C 14/0641 (2013.01); G01K 7/22 (2013.01); G01K 7/226 (2013.01); H01C 7/04 (2013.01); H01C 17/06513 (2013.01); H01C 17/12 (2013.01);
Abstract

Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TiAlN(where 0.70≤y/(x+y)≤0.95, 0.4≤z≤0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.


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