The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Sep. 29, 2014
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Tohoku University, Sendai-shi, JP;
The Japan Steel Works, Ltd., Shinagawa-ku, JP;
Tohru Ishiguro, Miyagi, JP;
Quanxi Bao, Miyagi, JP;
Chiaki Yokoyama, Miyagi, JP;
Daisuke Tomida, Miyagi, JP;
Shigefusa Chichibu, Miyagi, JP;
Rinzo Kayano, Hokkaido, JP;
Mutsuo Ueda, Hokkaido, JP;
Makoto Saito, Ibaraki, JP;
Yuji Kagamitani, Ibaraki, JP;
MITSUBISHI CHEMICAL CORPORATION, Chiyoda-ku, JP;
TOHOKU UNIVERSITY, Sendai-shi, JP;
THE JAPAN STEEL WORKS, LTD., Shinagawa-ku, JP;
Abstract
A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.