The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Dec. 10, 2014
Applicant:

Glo Ab, Lund, SE;

Inventors:

Scott Brad Herner, San Jose, CA (US);

Daniel Bryce Thompson, Walnut Creek, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 33/24 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/24 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 2933/0016 (2013.01); Y10S 977/762 (2013.01); Y10S 977/891 (2013.01); Y10S 977/95 (2013.01);
Abstract

Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.


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