The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Mar. 27, 2017
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Zheng Zeng, Fremont, CA (US);

Ching-Chung Ko, Jhubei, TW;

Bo-Shih Huang, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/47 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 27/0255 (2013.01); H01L 29/0649 (2013.01); H01L 29/47 (2013.01); H01L 29/78 (2013.01); H01L 29/872 (2013.01);
Abstract

The invention provides an electrostatic discharge (ESD) protection device formed by a Schottky diode. An exemplary embodiment of an ESD protection device comprises a semiconductor substrate having an active region. A first well region having a first conductive type is formed in the active region. A first heavily doped region having the first conductive type is formed in the first well region. A first metal contact is disposed on the first doped region. A second metal contact is disposed on the active region, connecting to the first well region without through any heavily doped region being located therebetween, wherein the first metal contact and the second metal contact are separated by a polysilicon pattern disposed on the first well region.


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