The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Aug. 10, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Ming-Te Wei, Changhua County, TW;
Chun-Hsien Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 21/8234 (2006.01); H01L 21/033 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/7681 (2013.01); H01L 21/76811 (2013.01); H01L 21/823475 (2013.01); H01L 23/5226 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a first dielectric layer is formed on the substrate, in which a first conductor is embedded within the first dielectric layer. Next, a second dielectric layer is formed on the first dielectric layer, part of the second dielectric layer is removed to form a contact hole, and a lateral etching process is conducted to expand the contact hole to form a funnel-shaped opening. Next, a metal layer is formed in the funnel-shaped opening, and the metal layer is planarized to form a second conductor.