The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Feb. 24, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventor:
Carlos Strocchia-Rivera, Highland, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/08 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01R 27/08 (2013.01);
Abstract
A method of proving inline characterization of electrical properties of a fin-shaped field effect transistor (finFET) is provided. Embodiments include applying an electrical current along a length of at least one fin of a finFET disposed over a wafer surface; generating a magnetic field across a width of the at least one fin, wherein the magnetic field is perpendicular in direction to the electrical current; and detecting electron flow concentrated at an upper portion of the at least one fin.