The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Dec. 09, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
VietHa Nguyen, Yongin-si, KR;
Thomas Oszinda, Hwaseong-si, KR;
Jongmin Baek, Seoul, KR;
Sanghoon Ahn, Goyang-si, KR;
Byunghee Kim, Seoul, KR;
Wookyung You, Incheon, KR;
Naein Lee, Hwasung, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
A semiconductor device may include a substrate, a first interlayered insulating layer on the substrate having openings, conductive patterns provided in the openings, first to fourth insulating patterns stacked on the substrate provided with the conductive patterns, and a second interlayered insulating layer provided on the fourth insulating pattern.