The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Sep. 13, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Kyung-Eun Kim, Seoul, KR;

Yong-Kwan Kim, Yongin-si, KR;

Se-Myeong Jang, Gunpo-si, KR;

Yoo-Sang Hwang, Suwon-si, KR;

Bong-Soo Kim, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/108 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); G11C 11/4082 (2013.01); G11C 11/4087 (2013.01); G11C 11/4091 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/10885 (2013.01); G11C 11/40615 (2013.01);
Abstract

A semiconductor device includes a substrate including a plurality of active areas. A conductive pattern is in contact with an active area. First and second conductive line structures face first and second side walls of the conductive pattern. An air spacer is disposed between the first and second side walls. The first and second conductive line structures include a conductive line and a conductive line mask layer. The conductive line mask layer includes a lower portion having a first width and an upper portion having a second width narrower than the first width. The air spacer includes a first air spacer disposed on a side wall of the lower portion of the conductive line mask layer and a second air spacer disposed on a side wall of the upper portion of the conductive line mask layer. The second air spacer is connected with the first air spacer.


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