The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Mar. 06, 2017
Shibaura Mechatronics Corporation, Yokohama-shi, Kanagawa, JP;
Yuki Saito, Yokohama, JP;
Konosuke Hayashi, Yokohama, JP;
Takashi Ootagaki, Yokohama, JP;
Yuji Nagashima, Yokohama, JP;
SHIBAURA MECHATRONICS CORPORATION, Kanagawa, JP;
Abstract
According to the embodiment, a substrate treating devicefor treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tankthat stores the etchant L; a concentration sensorthat measures a concentration of nitrous acid in the etchant L; an alcohol feeding linethat feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unitthat feeds the etchant L in the storage tankto the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.