The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jul. 12, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Junhong Feng, Shanghai, CN;
Zhenghao Gan, Shanghai, CN;
Abstract
A semiconductor structure includes a semiconductor device that includes an active region having a semiconductor fin and a gate structure across the semiconductor fin. The gate structure includes a gate electrode. The semiconductor structure also includes a gate line extending from the gate electrode and a metal wiring that is positioned above the gate line and is electrically connected to the gate line through two or more nodes. The semiconductor structure also includes a first measuring electrode and a second measuring electrode coupled respectively to two ends of the metal wiring, the first measuring electrode disposed closer to the gate electrode than the second measuring electrode. The semiconductor structure is configured to measure the temperature of the semiconductor device. During temperature measurement, the first measurement electrode is coupled to a first potential and the second measurement electrode is coupled to a second potential that is lower than the first potential.