The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Oct. 31, 2014
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Shin-ichiro Takagi, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
Each pixel region PX includes a photoelectric conversion region S, a resistive gate electrode R, a first transfer electrode T, a second transfer electrode T, a barrier region B positioned directly beneath the first transfer electrode Tin a semiconductor substrate, and a charge accumulation region Spositioned directly beneath the second transfer electrode Tin the semiconductor substrate. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S, and the first transfer electrode Tand the second transfer electrode Tare electrically connected to each other.