The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Oct. 23, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Duli Mao, Sunnyvale, CA (US);
Dajiang Yang, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Dyson H. Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide layer disposed proximate to a seed area on a surface of the first semiconductor material. The method also includes depositing a second semiconductor material over the surface of the first semiconductor material, and annealing the first semiconductor material and second semiconductor material. A portion of the second semiconductor material is etched away to form part of a source follower transistor, and dopant is implanted into the second semiconductor material to form a first doped region, a third doped region, and a second doped region. The second doped region is laterally disposed between the first doped region and the third doped region, and the second doped region is a channel of the source follower transistor.