Solid-state imaging device

Abstract

The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy. A solid-state imaging device includes a first optical layer that transmits visible light and at least a part of near-infrared light, a second optical layer that absorbs at least a part of the near-infrared light and a pixel array that includes a first light-receiving element that detects the visible light transmitted through the first optical layer and the second optical layer and a second light-receiving element that detects the near-infrared light transmitted through the first optical layer, in which the second optical layer has an opening at a part corresponding to the second light-receiving element, the first optical layer includes a compound (A) having at least one absorption maximum at the wavelength of from 750 to 900 nm, the second optical layer includes a compound (B) having at least one absorption maximum at the wavelength of from 755 to 1050 nm, an absorption maximum wavelength on a longest wavelength side of the compound (B) is larger than an absorption maximum wavelength on the longest wavelength side of the compound (A), and a difference between both is from 5 to 150 nm.