The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Jan. 23, 2017
Applicant:
Ovonyx Memory Technology, Llc, Alexandria, VA (US);
Inventors:
John Moore, Boise, ID (US);
Joseph F. Brooks, Boise, ID (US);
Assignee:
OVONYX MEMORY TECHNOLOGY, LLC, Alexandria, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 23/00 (2006.01); H01L 45/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 24/03 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/143 (2013.01); H01L 45/1608 (2013.01); H01L 2224/0311 (2013.01); H01L 2224/05014 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06179 (2013.01); H01L 2924/1443 (2013.01);
Abstract
A semiconductor memory device and front-end method of fabricating nickel plated caps over bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication. In some examples, the method and device include one or more conductive and insulating layers formed over a substrate, and a plurality of memory cells over the conductive and insulating layers.