The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Nov. 25, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Andre Schmenn, Sachsenkam, DE;

Damian Sojka, Regensburg, DE;

Isabella Goetz, Regensburg, DE;

Gudrun Stranzl, Goedersdorf, AT;

Sebastian Werner, Villach, AT;

Thomas Fischer, Regensburg, DE;

Carsten Ahrens, Pettendorf, DE;

Edward Fuergut, Dasing, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 27/02 (2006.01); H01L 23/31 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/49838 (2013.01); H01L 27/0248 (2013.01); H01L 27/0255 (2013.01); H01L 29/861 (2013.01); H01L 2224/16 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/13055 (2013.01);
Abstract

An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.


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