The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
May. 04, 2017
United Microelectronics Corp., Hsinchu, TW;
Kun-Ju Li, Tainan, TW;
Li-Chieh Hsu, Taichung, TW;
Yi-Han Liao, Taichung, TW;
Chun-Tsen Lu, Tainan, TW;
Chih-Hsun Lin, Pingtung County, TW;
Hsin-Jung Liu, Pingtung County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating fin structure is provided. A patterned catalyst layer and a patterned passivation layer extending along a first direction are formed on a substrate. The patterned passivation layer is located on the patterned catalyst layer. A carbon layer is formed on at least one side of the patterned catalyst layer and includes hollow carbon tubes arranged along the first direction. Each hollow carbon tube extends along a second direction. A removal process is performed to remove the top and a portion of the bottom of each hollow carbon tube closest to the substrate, so that remnants are left and serve as a mask layer. Two adjacent remnants form a stripe pattern extending along the second direction. The patterned passivation layer and the patterned catalyst layer are removed. The pattern of the mask layer is transferred to the substrate to form fin structures. The mask layer is removed.