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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9966251 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Apr. 07, 2015

Method of manufacturing semiconductor device and substrate processing apparatus

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Ryota Sasajima, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Yosuke Ota, Toyama, JP;

Naonori Akae, Toyama, JP;

Kojiro Yokozawa, Toyama, JP;

Assignee:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Jaehwan Oh

Assistant Examiner:

John M Parker

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); C23C 16/54 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); C23C 16/402 (2013.01); C23C 16/45546 (2013.01); C23C 16/54 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02238 (2013.01); H01L 21/02244 (2013.01); H01L 21/02337 (2013.01); H01L 21/3141 (2013.01); H01L 21/31608 (2013.01); H01L 21/31645 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01);
Abstract

Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

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