The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Jun. 12, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Lee Chen, Cedar Creek, TX (US);
Zhiying Chen, Austin, TX (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32935 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 37/32697 (2013.01); H01J 37/32899 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01);
Abstract
This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.