The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

May. 31, 2017
Applicant:

Ngk Insulators, Ltd., Nagoya, Aichi-prefecture, JP;

Inventors:

Katsuhiro Imai, Nagoya, JP;

Makoto Iwai, Kasugai, JP;

Takanao Shimodaira, Nagoya, JP;

Assignee:

NGK INSULATORS, LTD., Aichi-prefecture, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); C30B 9/00 (2006.01); C30B 19/02 (2006.01); C30B 29/40 (2006.01); C30B 33/02 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); C30B 9/00 (2013.01); C30B 19/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 33/02 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H01L 33/007 (2013.01);
Abstract

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0≤(an average thickness (μm) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)≤10.0 . . . (1); 0.1≤ a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)≤0.6 . . . (2); 1.10≤a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element . . . (3)


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