The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jun. 17, 2016
Qualcomm Incorporated, San Diego, CA (US);
Xiangdong Chen, San Diego, CA (US);
Hyeokjin Bruce Lim, San Diego, CA (US);
Satyanarayana Sahu, San Diego, CA (US);
Venugopal Boynapalli, San Marcos, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A MOS IC may include a first contact interconnect in a first standard cell that extends in a first direction and contacts a first MOS transistor source and a voltage source. Still further, the MOS IC may include a first double diffusion break extending along a first boundary in the first direction of the first standard cell and a second standard cell. The MOS IC may also include a second contact interconnect extending over a portion of the first double diffusion break. In an aspect, the second contact interconnect may be within both the first standard cell and the second standard cell and coupled to the voltage source. Additionally, the MOS IC may include a third contact interconnect extending in a second direction orthogonal to the first direction and couples the first contact interconnect and the second contact interconnect together.