The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Aug. 27, 2015
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Yusuke Maeyama, Saitama, JP;
Shunichi Nakamura, Saitama, JP;
Atsushi Ogasawara, Saitama, JP;
Ryohei Osawa, Saitama, JP;
Akihiko Shibukawa, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A wide gap semiconductor device comprises a first conductive-type semiconductor layer (); a second conductive-type region (), () that is provided on the first conductive-type semiconductor layer (); a first electrode (), of which a part is disposed on the second conductive-type region (), () and the other part is disposed on the first conductive-type semiconductor layer (); an insulating layer (), (), () that is provided adjacent to the first electrode () on the first conductive-type semiconductor layer () and that extends to an end part of the wide gap semiconductor device; and a second electrode () that is provided between the first electrode () and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer ().