The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jun. 27, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ji-Hoon Choi, Seongnam-si, KR;
SeungHyun Lim, Seoul, KR;
Sunggil Kim, Yongin-si, KR;
HongSuk Kim, Yongin-si, KR;
Hunhyeong Lim, Hwaseong-si, KR;
Hyunjun Sim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.