The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Feb. 25, 2016
Toshiba Memory Corporation, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor memory device includes a stacked body and a column. The stacked body includes a plurality of electrode layers. The column includes a semiconductor channel, a charge storage film, and a doped silicon layer. The semiconductor channel extends in the stacking direction. The semiconductor channel is a polycrystalline. An average grain size of crystals in a polycrystalline is not less than a film thickness of the semiconductor channel. The charge storage film is provided between the semiconductor channel and the electrode layers. The doped silicon layer contains a metal element and an impurity other than a metal element. The doped silicon layer is in contact with a top end of the semiconductor channel.