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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9960157 B1

PDFFull Text
Date of Patent:
May. 01, 2018

Filed:

Oct. 15, 2015

Bidirectional normally-off iii-v high electron mobility transistor (hemt)devices and circuits

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Gerhard Prechtl, Rosegg, AT;

Bernhard Zojer, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AUSTRIA AG, Villach, AT;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 27/088 (2006.01); H01L 27/085 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8258 (2013.01); H01L 27/0694 (2013.01); H01L 27/0883 (2013.01); H01L 29/42316 (2013.01); H01L 29/7787 (2013.01); H01L 27/085 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H03K 2217/0054 (2013.01);
Abstract

Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. The depletion mode transistor includes a first source/drain node, a second source/drain node, a first gate, and a second gate. The enhancement mode transistor includes a third source/drain node and a fourth source/drain node, and a third gate. The third source/drain node is coupled to the first source/drain node.

Find Patent Forward Citations

Prechtl, Gerhard. (2018). Bidirectional normally-off iii-v high electron mobility transistor (hemt)devices and circuits (U.S. Patent No. 9960157). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9960157

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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