The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Oct. 15, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Gerhard Prechtl, Rosegg, AT;
Bernhard Zojer, Villach, AT;
Assignee:
INFINEON TECHNOLOGIES AUSTRIA AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 27/088 (2006.01); H01L 27/085 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8258 (2013.01); H01L 27/0694 (2013.01); H01L 27/0883 (2013.01); H01L 29/42316 (2013.01); H01L 29/7787 (2013.01); H01L 27/085 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H03K 2217/0054 (2013.01);
Abstract
Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. The depletion mode transistor includes a first source/drain node, a second source/drain node, a first gate, and a second gate. The enhancement mode transistor includes a third source/drain node and a fourth source/drain node, and a third gate. The third source/drain node is coupled to the first source/drain node.