The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Aug. 05, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Oliver Hellmund, Neubiberg, DE;
Ingo Muri, Villach, AT;
Johannes Baumgartl, Riegersdorf, AT;
Iris Moder, Villach, AT;
Thomas Christian Neidhart, Klagenfurt, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76248 (2013.01); H01L 21/28 (2013.01); H01L 21/30608 (2013.01); H01L 21/30625 (2013.01); H01L 21/31111 (2013.01); H01L 21/76272 (2013.01); H01L 21/76283 (2013.01); H01L 29/4236 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 21/31053 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. An epitaxial layer is formed over the first side of the semiconductor substrate and the trenches. From a second side of the semiconductor substrate opposite to the first side, the sacrificial material in the trenches is removed. The trenches are filled with a conductive material.