The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Oct. 12, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dae-Ik Kim, Hwaseong-si, KR;
Eun-Jung Kim, Daegu, KR;
Yoo-Sang Hwang, Suwon-si, KR;
Bong-Soo Kim, Yongin-si, KR;
Je-Min Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a pattern includes forming a first level pattern layer on a feature layer on a substrate. The first level pattern layer includes a plurality of first line patterns and a plurality of first space burying patterns. The first line patterns extend parallel to one another in a first direction and the first space burying patterns extend parallel to one another in the first direction with first line patterns alternately disposed with first space burying patterns A portion of the plurality of first space burying patterns may be removed to form a second direction pattern space extending intermittently or continuously in the first level pattern layer. A second burying layer filling the second direction pattern space may be formed to form a network structure pattern. The feature layer may be etched with the network structure pattern as an etch mask to form a pattern of holes.