The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jul. 20, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hsin-Ming Hou, Tainan, TW;
Ji-Fu Kung, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); H01L 21/66 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G06F 17/50 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01);
Abstract
For improving wafer fabrication, yield and lifetime of wafers are predicted by determining coefficients of a yield domain for wafer yield prediction and a lifetime domain for a wafer lifetime prediction, an integral domain, an electric/layout domain, a metrology/defect domain, and a machine sensor domain in a hierarchical manner. With the aid of the hierarchically-determined coefficients, noises in prediction can be reduced so that precision of prediction results of the yields or the lifetimes of wafers can be raised.