The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Sep. 29, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-Si, Gyeonggi-Do, KR;
Seongjun Park, Seoul, KR;
Hyeonjin Shin, Suwon-si, KR;
Sungwng Kim, Seoul, KR;
Eunsung Kim, Suwon-si, KR;
Jaeyeol Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD, Gyeonggi-Do, KR;
RESEARCH AND BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-Do, KR;
Abstract
A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.