The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Apr. 26, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Yu-Jui Chang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/0615 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01);
Abstract

A semiconductor structure and a method of manufacturing the semiconductor structure are provided. The semiconductor structure includes at least a substrate, an isolated structure, a gate, a source, a drain, a deep well, and a body well. The deep well extends under the isolated structure, and the body well is formed in the deep well between the gate and the isolated structure, wherein the body well has a convex region extending under the isolated structure. The deep well has a drive-in region outside the convex region of the body well, and the drive-in region has a lower doping concentration than remainder of the deep well.


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