The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Feb. 26, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Wei-Che Tsai, Hsinchu, TW;
Hsin-Hung Chen, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 23/485 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/321 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 23/485 (2013.01); H01L 21/28518 (2013.01); H01L 21/823475 (2013.01);
Abstract
A semiconductor device includes a gate structure on a substrate; a protection layer on the gate structure; a source/drain region adjacent to the gate structure; and an interconnect plug on the source/drain region. The gate structure includes a gate electrode including a top surface; and a sidewall spacer interfacing a sidewall of the gate electrode. The protection layer covers at least a first portion of the top surface and the sidewall spacer. The protection layer is interposed between the interconnect plug and the gate electrode.