The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Mar. 30, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jeffrey Junhao Xu, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Vladimir Machkaoutsan, Leuven, BE;
Mustafa Badaroglu, Leuven, BE;
Junjing Bao, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Da Yang, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/70 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/285 (2013.01); H01L 21/76897 (2013.01); H01L 21/823821 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all surface area of a regrown source/drain region of the semiconductor device proximate to the gate stack.