The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Dec. 28, 2015
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Hopewell Junction, NY (US);

Su Chen Fan, Cohoes, NY (US);

Shom Ponoth, Gaithersburg, MD (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/28114 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 29/401 (2013.01); H01L 29/42376 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract

A transistor device includes a gate structure positioned above a semiconductor substrate, and spaced-apart sidewall spacers positioned above the substrate and adjacent sidewalls of the gate structure. An internal sidewall surface of each of the spaced-apart sidewall spacers includes an upper sidewall surface portion and a lower sidewall surface portion positioned between the upper sidewall surface portion and a surface of the substrate, wherein a first lateral width between first upper ends of the upper sidewall surface portions is greater than a second lateral width between second upper ends of the lower sidewall surface portions.


Find Patent Forward Citations

Loading…